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Atomic_layer_epitaxy entered the ranking for the first time today at position #. This is its highest position ever recorded.
This topic has appeared in the English Wikipedia rankings 1 time. It first appeared on 2026-05-21 and was most recently seen on 2026-05-21.
Atomic layer epitaxy (ALE), more generally known as atomic layer deposition (ALD), is a specialized form of thin film growth (epitaxy) that typically deposit alternating monolayers of two elements onto a substrate. The crystal lattice structure achieved is thin, uniform, and aligned with the structure of the substrate. The reactants are brought to the substrate as alternating pulses with "dead" times in between. ALE makes use of the fact that the incoming material is bound strongly until all sites available for chemisorption are occupied. The dead times are used to flush the excess material.
It is mostly used in semiconductor fabrication to grow thin films of thickness in the nanometer scale.
This topic has recently gained attention due to increased public interest. Search activity and Wikipedia pageviews suggest growing global engagement.
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